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- After deleting, the content of area where program is not written may remain undefined in some products, pad the unused program area with 0FFH for failsafe measure.
Related Products: ml610(Q)40x, ML610(Q)42x, ML610(Q)47x, ML610(Q)48x, ml610q10x, ml610q11x, ML610Q17x, ML610Q30x, ML610Q35x, ML610Q38x, ml610q41x, ml610q43x, ML610Q46x, ML620Q13x, ML620Q15x, ML620Q416/ML620Q418, ml620q503h/ml620q504h/ml620q506H, ml62q12xx, ML62Q13xx, ML62Q14xx, ML62Q15xx/ML62Q18xx, ML62Q16xx, ML62Q17xx - 创建于2024-07-14
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An error and warning were output after an attempt to read the data in the address 0:0000h of flash memory. What should I do to avoid this situation? Output error and warning: Warning 37 : ROMWINDOW/NOROMWIN is not specified Error 29 : out of range : memory not exist at the address l er0, 0000h
To perform direct addressing on the ROM window, define the ROM window area. When the ROM window area is not specified explicitly in a program, performing direct addressing on the area other than RAM will cause RASU8 assembler to output an error. The ROM window area varies by product. Specify the end address of the ROM window area specified in the program memory space in User’s Manual. ● When the script is written in C: #pragma romwin 0x0 0xdfff // <- Add this description. // * 0x0 0xdfff varies by product. unsigned short v0000h; // v0000h indicates a variable name. void main() { v0000h = *(unsigned short*)0x0000; // Read data of the address 0. } ● When the script is written in the assembly language: romwindow 0, 0dfffh ;; <- Add this description. ;; * 0 and 0dfffh vary by product. cseg at 1000h l er0, 0000h ;; Read data of the address 0. Related Products: ML610(Q)40x, ML610(Q)42x, ML610(Q)47x, ML610(Q)48x, ML610Q10x, ML610Q11x, ML610Q17x, ML610Q30x, ML610Q35x, ML610Q38x, ML610Q41x, ML610Q43x, ML610Q46x, ML620Q13x, ML620Q15x, ML620Q416/ML620Q418, ML620Q503H/ML620Q504H/ML620Q506H, ML62Q12xx, ML62Q13xx, ML62Q14xx, ML62Q15xx/ML62Q18xx, ML62Q16xx, ML62Q17xx
TPS-1在erasing the flash memory后，导入tps configurator出现一下问题
TPS-1在ERASEING THE FLASH MEMORY后,首先需要重新下载IMAGE文件，包括协议栈与配置文件等。然后再设置TPS CONFIGURATOR。
R5F572MNDDFC的Code Flash Memory 有多大？
R5F572MNDDFC的Code Flash Memory 有4 Mbytes
R5F572MNHDFB的Data Flash Memory Capacity是多大？
R5F572MNHDFB的Data Flash Memory Capacity是32K
兆易创新Flash Memory，这款国产flash的优势是什么？
兆易创新Flash产品通过DQS ISO9001及ISO14001等管理体系的认证，SPI FLASH还通过车规AEC-Q100认证，产品质量不输于国外等存储品牌。
Is the RF SAW filter needed?
Although it is not needed for meeting the standard, we recommend to insert the RF SAW filter because interfering sources may exist near any actual operation band. Related Products: ML7344/ML7406 family, ML7345 family, ML7396 family, ML7404, ML7414
世强有没有TTS语音播报芯片
世强暂时没有TTS语音播报芯片，都需要将文本转换为录制语音，然后通过专用语音芯片播报出来。推荐ROHM旗下LAPIS的ML22Q374是语音合成LSI，内置闪存，可存储语音数据。支持4位ADPCM2，8位非线性PCM，8位PCM，16位PCM，可以为每个语音语句指定。可以参考文章：【产品】内置可编程语音的小容量FLASH ROM的语音合成LSI--ML22Q374系列。
Can I write data on 0000H to 0FFFH of the FLASH data area Segment A?
Reading is possible but not writing. Segment A is the mirror area of Segment 2. If data are written on Segment 2, they can be also read from Segment A. Related Products: ML610(Q)40x, ML610(Q)42x, ML610(Q)47x, ML610(Q)48x, ML610Q10x, ML610Q11x, ML610Q17x, ML610Q30x, ML610Q35x, ML610Q38x, ML610Q41x, ML610Q43x, ML610Q46x, ML620Q13x, ML620Q15x, ML620Q416/ML620Q418, ML620Q503H/ML620Q504H/ML620Q506H, ML62Q12xx, ML62Q13xx, ML62Q14xx, ML62Q15xx/ML62Q18xx, ML62Q16xx, ML62Q17xx
Is there a way to read the data in the program memory space directly from the program memory space instead of reading it out using the ROM reference area in the data memory space?
Data cannot be read directly from the program memory space because there is no instruction to read directly from the program memory space. Please use the ROM reference area in the data memory space to read. Related Products: ML610(Q)40x, ML610(Q)42x, ML610(Q)47x, ML610(Q)48x, ML610Q10x, ML610Q11x, ML610Q17x, ML610Q30x, ML610Q35x, ML610Q36x, ML610Q38x, ML610Q41x, ML610Q43x, ML610Q46x, ML620Q13x, ML620Q15x, ML620Q416/ML620Q418, ML620Q503H/ML620Q504H/ML620Q506H, ML62Q12xx, ML62Q13xx, ML62Q14xx, ML62Q15xx/ML62Q18xx, ML62Q16xx, ML62Q17xx
When the memory contents are displayed in the [Memory Browser] view of the LEXIDE-U16 (or LEXIDE-Ω), the upper and lower data appear to be swapped, unlike the actual memory values.
Check the display unit of [Cell Size] from the pop-up menu displayed by right-clicking on the [Memory Browser] view. If the display unit is 1 byte, the same image as the actual memory is displayed in bytes. If the display unit is 2 bytes or more, it will be displayed for each set unit. For example, if the display unit is 2 bytes, the value for 2 bytes is displayed by swapping the upper 1 byte and the lower 1 byte.
Can I use the DTU8 debugger and on-chip emulator to save the contents of code memory to a file?
Yes, it is possible. Execute [Save Program File] in the [File] menu on the DTU8 debugger. Related Products: ML610(Q)40x, ML610(Q)42x, ML610(Q)47x, ML610(Q)48x, ML610Q10x, ML610Q11x, ML610Q17x, ML610Q30x, ML610Q35x, ML610Q36x, ML610Q38x, ML610Q41x, ML610Q43x, ML610Q46x, ML620Q13x, ML620Q15x, ML620Q416/ML620Q418, ML620Q503H/ML620Q504H/ML620Q506H, ML62Q12xx, ML62Q13xx, ML62Q14xx, ML62Q15xx/ML62Q18xx, ML62Q16xx, ML62Q17xx
Do I need a PC when writing to flash memory with the on-chip emulator?
It is needed. The on-chip emulator uses tool software on the PC to write to flash memory. Related Products: ML610(Q)40x, ML610(Q)42x, ML610(Q)47x, ML610(Q)48x, ML610Q10x, ML610Q11x, ML610Q17x, ML610Q30x, ML610Q35x, ML610Q38x, ML610Q41x, ML610Q43x, ML610Q46x, ML620Q13x, ML620Q15x, ML620Q416/ML620Q418, ML620Q503H/ML620Q504H/ML620Q506H, ML62Q12xx, ML62Q13xx, ML62Q14xx, ML62Q15xx/ML62Q18xx, ML62Q16xx, ML62Q17xx
Please tell me the built-in flash writing method for mass production of ML22Q53x series and ML22Q62x series.
There are three ways to write to the built-in flash during mass production. (1) Write and ship at our factory (2) Write by the customer with a third-party flash writer (write using the flash memory interface) (3) Write using the clock synchronous serial interface of the MCU command interface For details on the flash memory rewrite function, refer to "Function description" and "Flash memory rewrite function" in the data sheet.
In a checksum calculation of program and memory space, the checksum value calculated by program and the checksum value calculated with HTU8 do not match when the test data area (rewriting not possible area) of the program memory space segment) is included. Why?
When calculating the checksum of memory with program, if data in rewriting not possible area in the test data area are read, the actually written value is read. On the other hand, HTU8 handles the data in rewriting not possible area of the test data area as 0FFh. Therefore, the value is different from the checksum value of HTU8. When calculating the checksum with program, handle the rewriting not possible area data as 0FFh. Related Products: ML610(Q)40x, ML610(Q)42x, ML610(Q)47x, ML610(Q)48x, ML610Q10x, ML610Q11x, ML610Q17x, ML610Q30x, ML610Q35x, ML610Q36x, ML610Q38x, ML610Q41x, ML610Q43x, ML610Q46x, ML620Q13x, ML620Q15x, ML620Q416/ML620Q418, ML620Q503H/ML620Q504H/ML620Q506H, ML62Q12xx, ML62Q13xx, ML62Q14xx, ML62Q15xx/ML62Q18xx, ML62Q16xx, ML62Q17xx
数据表中记载的“Energy Sharing control Operation Example”示意图，在使用2层基板和使用4层基板时有区别吗？
没有，示意图与基板层数无关均可适用。但是，Share功率的发热取决于基板的热阻。
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